The entire surface of the glass substrate is coated with the ito film but only the center portion of the substrate 30 mm in diameter is certified.
Ito glass sheet resistance.
The entire surface of the glass substrate is coated with the ito film but only the center portion of the substrate 30 mm in diameter is certified.
It is commonly used to characterize materials made by semiconductor doping metal deposition resistive paste printing and glass coating examples of these processes are.
Corning ultra thin glass.
Sheet resistance also known as surface resistance or surface resistivity is a common electrical property used to characterise thin films of conducting and semiconducting materials.
It contains approximately 90 of tin oxide iv sno2 and 10 of indium oxide iii in2o3.
An ito glass has a property of low sheet resistance and high transmittance.
Indium tin oxide ito is a ternary composition of indium tin and oxygen in varying proportions.
It is mostly used in research and development.
Please contact us for further details about our custom ito coating services.
The standard is suitable for larger non contact probes four point probes.
Ito sheet resistance standards itosrs product description.
The ito sheet resistance standard consists of a glass substrate with a thin film of indium tin oxide sputtered on it.
Other indium tin oxide film thickness or ito surface resistivity 5 ω 1 kω custom glass thicknesses 0 1 mm different substrate materials or backside anti reflection coatings on a batch basis are available per request.
We control the thickness of the ito films of all cec s cec.
Ito glass is formed of tin oxide doped with indium.
Sheet resistance often called sheet resistivity is a measure of resistance of thin films that are nominally uniform in thickness.
It is a measure of the lateral resistance through a thin square of material i e.
Ito coated glass substrates are widely used to organic inorganic heterojunction solar cells schottky solar cells cdte solar cells and other various thin film solar cells as transparent semiconductor oxide electrode materials since their transparency and high conductivity.
The resistance between opposite sides of a square.
Doped semiconductor regions e g silicon or polysilicon and the resistors that are screen.
The ito thin films can be prepared by rf sputtering at a substrate temperature of 70 c on glass with 222 preferred orientation grain size of 7 nm high optical transparency of 95 in the wavelength range of 550 650 nm and sheet resistance of 103 ω higher than 36 ω of commercial ito.
The ito sheet resistance standard consists of a glass substrate with a thin film of indium tin oxide sputtered on it.